n-channel enhancement mode power mosfet.
* VDS =150V,ID =100A RDS(ON) <11mΩ @ VGS=10V (Typ:9.5mΩ)
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
General Features
* VDS =150V,ID =100A RDS(ON) <11mΩ @ VGS=10V (Typ:9.5mΩ)
* High density cell design for ultra.
The NCE15H10D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications.
General Features
* VDS =150V,ID =100A RDS(ON) <1.
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